Manufacturer Part No. | IRFD210PBF |
Vgs - Gate-Source Breakdown Voltage | 20 V |
Packaging | Tube |
Brand | Vishay / Siliconix |
Product Category | MOSFET |
Maximum Operating Temperature | + 150 C |
Vds - Drain-Source Breakdown Voltage | 200 V |
Transistor Polarity | N-Channel |
Configuration | Single Dual Drain |
Rds On - Drain-Source Resistance | 1.5 Ohms |
Manufacturer | Vishay |
Mounting Style | Through Hole |
Minimum Operating Temperature | - 55 C |
Channel Mode | Enhancement |
Pd - Power Dissipation | 1 W |
Rise Time | 17 ns |
Package/Case | HexDIP-4 |
Fall Time | 17 ns |
Id - Continuous Drain Current | 600 mA |
Alternate Part No. | 844-IRFD210PBF |
Typical Turn-Off Delay Time | 14 ns |
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Lead (Pb)-free. IRFD210PbF. SiHFD210-E3. SnPb. IRFD210. SiHFD210. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted). PARAMETER. [2]
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Buy the VISHAY SILICONIX IRFD210PBF online at Newark element14 Canada. Check Stock, Availability, and view Datasheets at Newark element14 Canada ... [4]