Vishay SiHD3N50D-GE3 View larger

Vishay SiHD3N50D-GE3

Vishay

SiHD3N50D-GE3


MOSFET 500V 3.2ohm@10V 3A N-Ch D-SRS

$ 1.48

2894 2894 Items In Stock

Specification of SiHD3N50D-GE3

Vgs - Gate-Source Breakdown Voltage 30 V
Series E
Rds On - Drain-Source Resistance 3.2 Ohms
Fall Time 13 ns
Brand Vishay / Siliconix
Rise Time 9 ns
Manufacturer Part No. SiHD3N50D-GE3
Transistor Polarity N-Channel
Package/Case DPAK-2
Product Category MOSFET
Id - Continuous Drain Current 3 A
Qg - Gate Charge 6 nC
Mounting Style SMD/SMT
Configuration Single
Manufacturer Vishay
Packaging Reel
Alternate Part No. 78-SIHD3N50D-GE3
Forward Transconductance - Min 1 S
Pd - Power Dissipation 104 W
Vds - Drain-Source Breakdown Voltage 500 V